ds30169 rev. 6 - 2 1 of 3 MMDT5401 www.diodes.com diodes incorporated epitaxial planar die construction complementary npn type available (mmdt 5551) ideal for medium power amplification and switching ultra-small surface mount package also available in lead free version features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 mechanical data case: sot-363, molded plastic case material - ul flammability rating 94v-0 moisture sensitivity: level 1 per j-std-020a terminals: solderable per mil-std-202, method 208 also available in lead free plating (matte tin finish). please see ordering information, note 5, on page 2 terminal connections: see diagram marking (see page 2): k4m order & date code information: see page 2 weight: 0.006 grams (approx.) MMDT5401 dual pnp small signal surface mount transistor notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. characteristic symbol MMDT5401 unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5.0 v collector current - continuous (note 1) i c -200 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm
ds30169 rev. 6 - 2 2 of 3 MMDT5401 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo -160 v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -150 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -50 na a v cb = -120v, i e = 0 v cb = -120v, i e = 0, t a = 100 c emitter cutoff current i ebo -50 na v eb = -3.0v, i c = 0 on characteristics (note 3) dc current gain h fe 50 60 50 240 i c = -1.0ma, v ce = -5.0v i c = -10ma, v ce = -5.0v i c = -50ma, v ce = -5.0v collector-emitter saturation voltage v ce(sat) -0.2 -0.5 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -1.0 v i c = -10ma, i b = -1.0ma i c = -50ma, i b = -5.0ma small signal characteristics output capacitance c obo 6.0 pf v cb = -10v, f = 1.0mhz, i e = 0 small signal current gain h fe 40 200 v ce = -10v, i c = -1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = -10v, i c = -10ma, f = 100mhz noise figure nf 8.0 db v ce = -5.0v, i c = -200 a, r s = 10 f = 1.0khz ordering information (note 4) device packaging shipping MMDT5401-7 sot-363 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free version (with lead free terminal finish) part number, please add "-f" suffix to part number a bove. example: MMDT5401-7-f. marking information k4m k4m ym ym k4m = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30169 rev. 6 - 2 3 of 3 MMDT5401 www.diodes.com 10 100 1000 1 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) c fi g . 5, gain bandwidth product vs collector current v= 10v ce 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1.0 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) c fi g . 4, base emitter volta g e vs. collector current t = 25c a t = -50c a t = 150c a v=5v ce 1 10 100 1000 10 , 000 1 10 100 1000 v = 5v ce h , dc current gain (normalized) fe i , collector current (ma) c fi g . 3, dc current gain vs. collector current t= 25c a t= -50c a t = 150c a 0.01 0.1 1.0 10 . 0 1 10 100 1000 t = 25c a t = -50c a t = 150c a v , collector to emitter ce(sat) saturation voltage (v) i , collector current (ma) c fig. 2, collector emitter saturation voltage vs. collector current i c i b =10 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 100 150 200 0
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